EN29LV160BB-Flash Memory

The EN29LV160B is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160B features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• 3.0V, single power supply operation
   - Minimizes system level power requirements
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5MHz)
   - 9 mA typical active read current
   - 20 mA typical program/erase current
   - Less than 1 μA standby current
• Flexible Sector Architecture:
   - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and thirty-one 64-Kbyte sectors (byte mode)
   - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword sectors (word mode)
• Sector protection :
  - Hardware locking of sectors to prevent program or erase operations within individual sectors
  - Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
• High performance program/erase speed
  - Byte/Word program time: 8μs typical
  - Sector erase time: 500ms typical
  - Chip erase time: 17.5s typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA# polling and toggle bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
• Triple-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• minimum 100K program/erase endurance cycle
• Package Options
  - 48-pin TSOP (Type 1)
  - 48 ball 6mm x 8mm TFBGA
• Industrial Temperature Range